Characteristics of Annealing of InN Films

Xie Zili; Zhang Rong; Xiu Xiangqian; Bi Zhaoxia; Liu Bin; Pu Lin; Chen Dunjun; Han Ping; Gu Shulin; Jiang Ruoliang; Zhu Shunming; 赵 红; Zhao Hong; Shi Yi

Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 340-344

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Characteristics of Annealing of InN Films

Xie Zili, Zhang Rong, Xiu Xiangqian, Bi Zhaoxia, Liu Bin, Pu Lin, Chen Dunjun, Han Ping, Gu Shulin, Jiang Ruoliang, Zhu Shunming, 赵红, Zhao Hong and Shi Yi

+ Author Affiliations

Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China
Jiangsu Provincial Key Laboratory of advanced Photonic and Electronic Materials,Department of Physics, Nanjing University, Nanjing 210093, China

Abstract: The characteristics of annealing of InN films with NH3 atmosphere are investigated.The XRD,SEM,and XPS are used to analyze the samples.The experiments indicate that the crystalline quality and morphology of InN do not evolve monotonously with annealing temperatures.During the annealing,In atoms resulting from the volatilization of N atoms aggregate on the surface,and thus In grains form.When the annealing temperature is higher than 425℃,the density of In grains decreases due to the desorption of In atoms.The results of XRD and SEM indicate that the sample with most dense In grains has a low crystalline quality.Thus,we consider that In grains prevent the improvement of InN quality by the thermal annealing maybe due to the separation of subjacent InN from the ammonia environment and the structural mismatch between In and InN grains.

Key words: InN, annealing, XRD, SEM, XPS

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Xie Zili, Zhang Rong, Xiu Xiangqian, Bi Zhaoxia, Liu Bin, Pu Lin, Chen Dunjun, Han Ping, Gu Shulin, Jiang Ruoliang, Zhu Shunming, 赵红, Zhao Hong, Shi Yi. Characteristics of Annealing of InN Films[J]. Journal of Semiconductors, 2006, 27(2): 340-344.

Xie Z L, Zhang R, Xiu X Q, Bi Z X, Liu B, Pu L, Chen D J, Han P, Gu S L, Jiang R L, Zhu S M, Zhao H, Shi Y. Characteristics of Annealing of InN Films[J]. Chin. J. Semicond., 2006, 27(2): 340.

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Received: 20 August 2015 Revised: Online: Published: 01 February 2006

The characteristics of annealing of InN films with NH3 atmosphere are investigated.The XRD,SEM,and XPS are used to analyze the samples.The experiments indicate that the crystalline quality and morphology of InN do not evolve monotonously with annealing temperatures.During the annealing,In atoms resulting from the volatilization of N atoms aggregate on the surface,and thus In grains form.When the annealing temperature is higher than 425℃,the density of In grains decreases due to the desorption of In atoms.The results of XRD and SEM indicate that the sample with most dense In grains has a low crystalline quality.Thus,we consider that In grains prevent the improvement of InN quality by the thermal annealing maybe due to the separation of subjacent InN from the ammonia environment and the structural mismatch between In and InN grains.

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