Chin. J. Semicond. > 1990, Volume 11 > Issue 1 > 7-13
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GaInAs/AlGaAs应变量子阱结构的荧光特性

王杏华 and Reino Laiho

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(1): 7-13
      王杏华, Reino Laiho. GaInAs/AlGaAs应变量子阱结构的荧光特性[J]. 半导体学报(英文版), 1990, 11(1): 7-13.
      Citation:
      王杏华, Reino Laiho. GaInAs/AlGaAs应变量子阱结构的荧光特性[J]. 半导体学报(英文版), 1990, 11(1): 7-13.
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      • Received Date: 2015-08-19

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