Chin. J. Semicond. > 1986, Volume 7 > Issue 3 > 264-274
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MOS电容微分量的频率特性——确定Si/SiO_2界面态密度分布及俘获截面的一种新方法

许铭真 and 谭长华

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1986

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      Article Navigation >  Journal of Semiconductors  > 1986  >  7(3): 264-274
      许铭真, 谭长华. MOS电容微分量的频率特性——确定Si/SiO_2界面态密度分布及俘获截面的一种新方法[J]. 半导体学报(英文版), 1986, 7(3): 264-274.
      Citation:
      许铭真, 谭长华. MOS电容微分量的频率特性——确定Si/SiO_2界面态密度分布及俘获截面的一种新方法[J]. 半导体学报(英文版), 1986, 7(3): 264-274.
      shu

      • Received Date: 2015-08-20

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