Chin. J. Semicond. > 2002, Volume 23 > Issue 8 > 881-885
|

CONTENTS

GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较

沈晓明 , 张秀兰 , 孙元平 , 赵德刚 , 冯淦 , 张宝顺 , 张泽洪 , 冯志宏 and 杨辉

+ Author Affiliations

PDF

Key words: 立方GaN, MOVPE, 光辅助湿法腐蚀

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2635 Times PDF downloads: 996 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 August 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(8): 881-885
      沈晓明, 张秀兰, 孙元平, 赵德刚, 冯淦, 张宝顺, 张泽洪, 冯志宏, 杨辉. GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较[J]. 半导体学报(英文版), 2002, 23(8): 881-885.
      Citation:
      沈晓明, 张秀兰, 孙元平, 赵德刚, 冯淦, 张宝顺, 张泽洪, 冯志宏, 杨辉. GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较[J]. 半导体学报(英文版), 2002, 23(8): 881-885.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return