Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 169-174

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高纯度砷化镓残留受主BA、DA峰的电子声子耦合

陈廷杰 , 吴灵犀 , 徐寿定 , 孟庆惠 , 于鲲 and 李永康

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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 169-174
      陈廷杰, 吴灵犀, 徐寿定, 孟庆惠, 于鲲, 李永康. 高纯度砷化镓残留受主BA、DA峰的电子声子耦合[J]. 半导体学报(英文版), 1982, 3(3): 169-174.
      Citation:
      陈廷杰, 吴灵犀, 徐寿定, 孟庆惠, 于鲲, 李永康. 高纯度砷化镓残留受主BA、DA峰的电子声子耦合[J]. 半导体学报(英文版), 1982, 3(3): 169-174.
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      • Received Date: 2015-08-20

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