Chin. J. Semicond. > 1983, Volume 4 > Issue 2 > 154-160
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GaAs三元异质外延层厚度测量的X射线衍射比强度法

杨传铮

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    Received: 20 August 2015 Revised: Online: Published: 01 February 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(2): 154-160
      杨传铮. GaAs三元异质外延层厚度测量的X射线衍射比强度法[J]. 半导体学报(英文版), 1983, 4(2): 154-160.
      Citation:
      杨传铮. GaAs三元异质外延层厚度测量的X射线衍射比强度法[J]. 半导体学报(英文版), 1983, 4(2): 154-160.
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      • Received Date: 2015-08-20

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