Chin. J. Semicond. > 1987, Volume 8 > Issue 5 > 531-535
|

CONTENTS

Ga_(0.47)In_(0.53)As-InP异质结界面二维电子气

郑有炓 , 黄善祥 , Y.H.Chang , J.P.Cheng and B.D.McCombe

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2212 Times PDF downloads: 829 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 May 1987

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1987  >  8(5): 531-535
      郑有炓, 黄善祥, Y.H.Chang, J.P.Cheng, B.D.McCombe. Ga_(0.47)In_(0.53)As-InP异质结界面二维电子气[J]. 半导体学报(英文版), 1987, 8(5): 531-535.
      Citation:
      郑有炓, 黄善祥, Y.H.Chang, J.P.Cheng, B.D.McCombe. Ga_(0.47)In_(0.53)As-InP异质结界面二维电子气[J]. 半导体学报(英文版), 1987, 8(5): 531-535.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return