Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 861-866
|

CONTENTS

环形火山口式硅边缘阴极发射体特性研究

赵宏卫 , 汪琛 , 黄仲平 , 蔡勇 , 王保平 and 童林夙

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1895 Times PDF downloads: 1116 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 861-866
      赵宏卫, 汪琛, 黄仲平, 蔡勇, 王保平, 童林夙. 环形火山口式硅边缘阴极发射体特性研究[J]. 半导体学报(英文版), 1997, 18(11): 861-866.
      Citation:
      赵宏卫, 汪琛, 黄仲平, 蔡勇, 王保平, 童林夙. 环形火山口式硅边缘阴极发射体特性研究[J]. 半导体学报(英文版), 1997, 18(11): 861-866.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return