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刘新宇, 孙海峰, 海朝和, 吴德馨. 0.5μm SOI CMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(5): 660-663.
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Proportional views
Key words: 部分耗尽, “浮体”效应, 反常亚阈值特性
Article views: 2198 Times PDF downloads: 1020 Times Cited by: 0 Times
Received: 20 August 2015 Revised: Online: Published: 01 May 2001
Citation: |
刘新宇, 孙海峰, 海朝和, 吴德馨. 0.5μm SOI CMOS器件和电路[J]. 半导体学报(英文版), 2001, 22(5): 660-663.
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