Chin. J. Semicond. > 2003, Volume 24 > Issue 6 > 586-591
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一种高性能的新结构IGBT(英文)

程序 , 吴郁 , 刘兴明 , 王哲 , 亢宝位 , 李俊峰 and 韩郑生

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Key words: 缓冲层, 深穿通, NPT-IGBT, 透明发射区

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(6): 586-591
      程序, 吴郁, 刘兴明, 王哲, 亢宝位, 李俊峰, 韩郑生. 一种高性能的新结构IGBT(英文)[J]. 半导体学报(英文版), 2003, 24(6): 586-591.
      Citation:
      程序, 吴郁, 刘兴明, 王哲, 亢宝位, 李俊峰, 韩郑生. 一种高性能的新结构IGBT(英文)[J]. 半导体学报(英文版), 2003, 24(6): 586-591.
      shu

      • Received Date: 2015-08-20

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