Chin. J. Semicond. > 1985, Volume 6 > Issue 5 > 545-551
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非晶硅隙态密度的场效应测量分析方法

连建宇 , 廖显伯 , 郑秉茹 and 孔光临

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    Received: 20 August 2015 Revised: Online: Published: 01 May 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(5): 545-551
      连建宇, 廖显伯, 郑秉茹, 孔光临. 非晶硅隙态密度的场效应测量分析方法[J]. 半导体学报(英文版), 1985, 6(5): 545-551.
      Citation:
      连建宇, 廖显伯, 郑秉茹, 孔光临. 非晶硅隙态密度的场效应测量分析方法[J]. 半导体学报(英文版), 1985, 6(5): 545-551.
      shu

      • Received Date: 2015-08-20

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