Chin. J. Semicond. > 2007, Volume 28 > Issue 4 > 500-506

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Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

Han Weihua, Yomoto M and Kasai S

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Abstract: A reproducible terahertz (THz) photocurrent was observed at low temperatures in a Schottky wrap gate single electron transistor with a normal-incident of a CH3OH gas laser with the frequency 2.54THz.The change of source-drain current induced by THz photons shows that a satellite peak is generated beside the resonance peak.THz photon energy can be characterized by the difference of gate voltage positions between the resonance peak and satellite peak.This indicates that the satellite peak exactly results from the THz photon-assisted tunneling.Both experimental results and theoretical analysis show that a narrow spacing of double barriers is more effective for the enhancement of THz response.

Key words: single electron transistorsTHz photon detectionphoton-assisted tunneling

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    Received: 18 August 2015 Revised: 07 December 2006 Online: Published: 01 April 2007

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      Han Weihua, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. Journal of Semiconductors, 2007, 28(4): 500-506. ****Han W H, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. Chin. J. Semicond., 2007, 28(4): 500.
      Citation:
      Han Weihua, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. Journal of Semiconductors, 2007, 28(4): 500-506. ****
      Han W H, Yomoto M, Kasai S. Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures[J]. Chin. J. Semicond., 2007, 28(4): 500.

      Detection of Terahertz Photon by GaAs-Based Single Electron Transistor at Low Temperatures

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-06
      • Revised Date: 2006-12-07
      • Published Date: 2007-04-09

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