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Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure
O.Ya Olikh, K.V. Voitenko, R.M. Burbelo, JaM. Olikh
Journal of Semiconductors, 2016, 37(12): 122002. doi: 10.1088/1674-4926/37/12/122002
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2 |
Quantum pump effect in a four-terminal mesoscopic structure
Kaikai Wang
Journal of Semiconductors, 2015, 36(2): 022002. doi: 10.1088/1674-4926/36/2/022002
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3 |
Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits
Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang, et al.
Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001
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4 |
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Jingtao Zhao, Zhaojun Lin, Chongbiao Luan, Ming Yang, Yang Zhou, et al.
Journal of Semiconductors, 2014, 35(12): 124003. doi: 10.1088/1674-4926/35/12/124003
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5 |
Effect of band gap energy on the electrical conductivity in doped ZnO thin film
Said Benramache, Okba Belahssen, Hachemi Ben Temam
Journal of Semiconductors, 2014, 35(7): 073001. doi: 10.1088/1674-4926/35/7/073001
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6 |
Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric
S. Theodore Chandra, N. B. Balamurugan
Journal of Semiconductors, 2014, 35(4): 044001. doi: 10.1088/1674-4926/35/4/044001
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7 |
Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode
Deepak K. Karan, Pranati Panda, G. N. Dash
Journal of Semiconductors, 2013, 34(1): 014001. doi: 10.1088/1674-4926/34/1/014001
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8 |
A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect
Sudhansu Kumar Pati, Kalyan Koley, Arka Dutta, N Mohankumar, Chandan Kumar Sarkar, et al.
Journal of Semiconductors, 2013, 34(11): 114002. doi: 10.1088/1674-4926/34/11/114002
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9 |
Peltier effect in doped silicon microchannel plates
Ci Pengliang, Shi Jing, Wang Fei, Xu Shaohui, Yang Zhenya, et al.
Journal of Semiconductors, 2011, 32(12): 122003. doi: 10.1088/1674-4926/32/12/122003
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10 |
Humidity sensitive organic field effect transistor
I. Murtaza, Kh S. Karimov, Zubair Ahmad, I. Qazi, M. Mahroof-Tahir, et al.
Journal of Semiconductors, 2010, 31(5): 054001. doi: 10.1088/1674-4926/31/5/054001
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11 |
Effect of chemical polish etching and post annealing on the performance of silicon heterojunction solar cells
Jiang Zhenyu, Dou Yuhua, Zhang Yu, Zhou Yuqin, Liu Fengzhen, et al.
Journal of Semiconductors, 2009, 30(8): 084010. doi: 10.1088/1674-4926/30/8/084010
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12 |
Performance Improvement of AlGaN/GaN HEMTs by Surface Treatment Prior to Si3N4 Passivation
Li Chengzhan, Liu Dan, Zheng Yingkui, Liu Xinyu, Liu Jian, et al.
Journal of Semiconductors, 2008, 29(2): 329-333.
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13 |
Effect of Native Oxide on Elasticity of a Silicon Nano-Plate
Wang Jing, Huang Qing'an, Yu Hong
Chinese Journal of Semiconductors , 2007, 28(7): 1048-1052.
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14 |
Improved Statistical Interconnect Timing Analysis Considering Scattering Effect
Lin Saihua, Yang Huazhong, Luo Rong, Wang Hui
Chinese Journal of Semiconductors , 2006, 27(11): 1918-1922.
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15 |
A 1×4 Polymeric Digital Optical Switch Basedon the Thermo-Optic Effect
Tang Yi, Zhang Hao, Yang Jianyi, Wang Minghua, Jiang Xiaoqing, et al.
Chinese Journal of Semiconductors , 2006, 27(4): 692-695.
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16 |
Effect of Lattice Mismatch on Luminescence of ZnO/Si Hetero-Structure
Fu Zhuxi, Sun Xiankai, Zhu Junjie, Lin Bixia
Chinese Journal of Semiconductors , 2006, 27(2): 239-244.
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17 |
Effect of Nickel Contamination on Formation of Denuded Zone in Czochralski Silicon
Wu Dongdong, Yang Deren, Xi Zhenqiang, Que Duanlin, Zhong Yao, et al.
Chinese Journal of Semiconductors , 2006, 27(4): 623-626.
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18 |
Fabrication of Ultrathin SiO2 Gate Dielectric by Direct Nitrogen Implantation into Silicon Substrate
Xu Xiaoyan, Cheng Xingzhi, Huang Ru，and Zhang Xing
Chinese Journal of Semiconductors , 2005, 26(2): 266-270.
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19 |
Space Charges Effect of Static Induction Transistor
Chen Jinhuo, Liu Su, Wang Yongshun, Li Siyuan, and Zhang Fujia, et al.
Chinese Journal of Semiconductors , 2005, 26(3): 423-428.
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20 |
One Method for Fast Gate Oxide TDDB Lifetime Prediction
Zhao Yi, Wan Xinggong, Xu Xiangming
Chinese Journal of Semiconductors , 2005, 26(12): 2271-2274.
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