Chin. J. Semicond. > 1993, Volume 14 > Issue 8 > 484-491
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强束流离子注入形成SOI结构时的温升效应的计算

田人和 , 顾永俶 , 卢武星 and 张荟星

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    Received: 20 August 2015 Revised: Online: Published: 01 August 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(8): 484-491
      田人和, 顾永俶, 卢武星, 张荟星. 强束流离子注入形成SOI结构时的温升效应的计算[J]. 半导体学报(英文版), 1993, 14(8): 484-491.
      Citation:
      田人和, 顾永俶, 卢武星, 张荟星. 强束流离子注入形成SOI结构时的温升效应的计算[J]. 半导体学报(英文版), 1993, 14(8): 484-491.
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      • Received Date: 2015-08-20

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