Simulation and Optimization of FD SOI CMOS Devices at High Temperatures

Liu Mengxin; Gao Yong; Zhang Xin; Wang Cailin; Yang Yuan

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Article Navigation > Journal of Semiconductors > 2006 > 27(6): 1120-1124

Liu Mengxin, Gao Yong, Zhang Xin, Wang Cailin, Yang Yuan. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Journal of Semiconductors, 2006, 27(6): 1120-1124. ****Liu M X, Gao Y, Zhang X, Wang C L, Yang Y. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Chin. J. Semicond., 2006, 27(6): 1120.

Citation:

Liu Mengxin, Gao Yong, Zhang Xin, Wang Cailin, Yang Yuan. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Journal of Semiconductors, 2006, 27(6): 1120-1124. ****

Liu M X, Gao Y, Zhang X, Wang C L, Yang Y. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Chin. J. Semicond., 2006, 27(6): 1120.

Citation:

Liu Mengxin, Gao Yong, Zhang Xin, Wang Cailin, Yang Yuan. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Journal of Semiconductors, 2006, 27(6): 1120-1124. ****

Liu M X, Gao Y, Zhang X, Wang C L, Yang Y. Simulation and Optimization of FD SOI CMOS Devices at High Temperatures[J]. Chin. J. Semicond., 2006, 27(6): 1120.

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Simulation and Optimization of FD SOI CMOS Devices at High Temperatures

Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China
Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China
Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China
East China Institute of Photo-Electron IC,Bengbu 233042,China
Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China
Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

Received Date: 2015-08-20

Abstract

Abstract

Simulations of fully depleted SOI CMOS devices are carried out using the ISE TCAD DESSIS device simulator in order to predict and analyze temperature effects in a temperature range of 300～600K.Comprehensive static and transient characteristics of SOI CMOS inverters are obtained.Furthermore,a new device structure called AlN-DSOI is proposed.The results indicate that,the threshold voltages of SOI CMOS circuits are sensitive to temperature.A significant reduction in output characteristics occurs as a result of an increase in ambient temperature.In addition,the transient simulations reveal how speed and power depend on ambient temperature.The improved structure has better electrical and driving performance on the basis of releasing the floating body effects and the thermal transfer problem in SOI circuits.
- fully depleted,
- self-heating effect,
- high temperature,
- transient behavior,
- drain/source on insulator,
- CMOS inverter

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