| Citation: |
Yang Hongbin, Fan Yongliang. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Journal of Semiconductors, 2006, 27(S1): 144-147.
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Yang H B, Fan Y L. Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer[J]. Chin. J. Semicond., 2006, 27(13): 144.
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Effect of Si Intermediate Layer on High Relaxed SiGe Layer Grown Using Low Temperature Si Buffer
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Abstract
High relaxed SiGe layer is grown using low temperature Si buffer technology which combined with a Si intermediate layer,the effect of the Si intermediate layer on relaxed SiGe layer is investigated.This work researches the misfit dislocation etching pattern in different thickness of the SiGe epilayer using the preferential chemical etching and the optical microscopy.Furthermore the influence of intermediate Si layer on dislocation generation,propagation and strain relaxation in epitaxial SiGe layer is investigated.The results show that the intermediate Si layer remarkably changed the dislocation generation and propagation in SiGe layer,consequently the surface morphology also appeared obviously difference-
Keywords:
- SiGe,
- strain relaxation,
- dislocation
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References
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Proportional views
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