Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 241-246
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带有发射极边减薄结构的异质结双极晶体管直流电流增益的计算

刘晓伟 , 张荣 and 吴德馨

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Key words: 电流增益, 异质结双极晶体管(HBT), Gummel-Poon模型

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 241-246
      刘晓伟, 张荣, 吴德馨. 带有发射极边减薄结构的异质结双极晶体管直流电流增益的计算[J]. 半导体学报(英文版), 2001, 22(2): 241-246.
      Citation:
      刘晓伟, 张荣, 吴德馨. 带有发射极边减薄结构的异质结双极晶体管直流电流增益的计算[J]. 半导体学报(英文版), 2001, 22(2): 241-246.
      shu

      • Received Date: 2015-08-19

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