Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 31-34
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离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文)

李联合 , 潘钟 , 张伟 , 林耀望 , 王学宇 and 吴荣汉

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Key words: Ga(In)NAs, 分子束外延(MBE), 离子损伤, X射线衍射, 光致发光

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 31-34
      李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. 离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文)[J]. 半导体学报(英文版), 2001, 22(1): 31-34.
      Citation:
      李联合, 潘钟, 张伟, 林耀望, 王学宇, 吴荣汉. 离子损伤对等离子体辅助分子束外延生长的 Ga NAs/ Ga As和Ga In NAs/ Ga As量子阱的影响(英文)[J]. 半导体学报(英文版), 2001, 22(1): 31-34.
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      • Received Date: 2015-08-19

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