Chin. J. Semicond. > 1998, Volume 19 > Issue 6 > 417-422
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In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化

王晓亮 , 孙殿照 , 孔梅影 , 侯洵 and 曾一平

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1998

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      Article Navigation >  Journal of Semiconductors  > 1998  >  19(6): 417-422
      王晓亮, 孙殿照, 孔梅影, 侯洵, 曾一平. In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化[J]. 半导体学报(英文版), 1998, 19(6): 417-422.
      Citation:
      王晓亮, 孙殿照, 孔梅影, 侯洵, 曾一平. In_xGa_(1-x)As/InP应变量子阱中激子跃迁能量随In组分的变化[J]. 半导体学报(英文版), 1998, 19(6): 417-422.
      shu

      • Received Date: 2015-08-18

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