Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 383-387
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CONTENTS

PMOS剂量计的退火特性

范隆 , 任迪远 , 张国强 , 严荣良 and 艾尔肯

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Key words: 剂量计, PMOS, 退火特性

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 383-387
      范隆, 任迪远, 张国强, 严荣良, 艾尔肯. PMOS剂量计的退火特性[J]. 半导体学报(英文版), 2000, 21(4): 383-387.
      Citation:
      范隆, 任迪远, 张国强, 严荣良, 艾尔肯. PMOS剂量计的退火特性[J]. 半导体学报(英文版), 2000, 21(4): 383-387.
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      • Received Date: 2015-08-20

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