Chin. J. Semicond. > 2001, Volume 22 > Issue 7 > 892-896
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利用FN振荡电流测量薄栅MOS结构栅氧化层中隧穿电子的有效质量

毛凌锋 , 谭长华 and 许铭真

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Key words: 有效质量, 场效应晶体管, 隧穿

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(7): 892-896
      毛凌锋, 谭长华, 许铭真. 利用FN振荡电流测量薄栅MOS结构栅氧化层中隧穿电子的有效质量[J]. 半导体学报(英文版), 2001, 22(7): 892-896.
      Citation:
      毛凌锋, 谭长华, 许铭真. 利用FN振荡电流测量薄栅MOS结构栅氧化层中隧穿电子的有效质量[J]. 半导体学报(英文版), 2001, 22(7): 892-896.
      shu

      • Received Date: 2015-08-20

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