Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 121-125
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抑制 SOIp- MOSFET中短沟道效应的 GeSi源 /漏结构(英文)

黄如 , 卜伟海 and 王阳元

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Key words: 短沟道效应, MOSFET, SOI

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 121-125
      黄如, 卜伟海, 王阳元. 抑制 SOIp- MOSFET中短沟道效应的 GeSi源 /漏结构(英文)[J]. 半导体学报(英文版), 2001, 22(2): 121-125.
      Citation:
      黄如, 卜伟海, 王阳元. 抑制 SOIp- MOSFET中短沟道效应的 GeSi源 /漏结构(英文)[J]. 半导体学报(英文版), 2001, 22(2): 121-125.
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      • Received Date: 2015-08-19

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