Chin. J. Semicond. > 1990, Volume 11 > Issue 1 > 55-62
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一种用于VLSI工艺模拟的反应离子刻蚀速率模型

冯向明 and 阮刚

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(1): 55-62
      冯向明, 阮刚. 一种用于VLSI工艺模拟的反应离子刻蚀速率模型[J]. 半导体学报(英文版), 1990, 11(1): 55-62.
      Citation:
      冯向明, 阮刚. 一种用于VLSI工艺模拟的反应离子刻蚀速率模型[J]. 半导体学报(英文版), 1990, 11(1): 55-62.
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      • Received Date: 2015-08-19

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