Chin. J. Semicond. > 1989, Volume 10 > Issue 8 > 620-625
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大剂量氧离子注入形成SOI结构的研究

陈南翔 , 苗伟 , 王忠烈 and 黄敞

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(8): 620-625
      陈南翔, 苗伟, 王忠烈, 黄敞. 大剂量氧离子注入形成SOI结构的研究[J]. 半导体学报(英文版), 1989, 10(8): 620-625.
      Citation:
      陈南翔, 苗伟, 王忠烈, 黄敞. 大剂量氧离子注入形成SOI结构的研究[J]. 半导体学报(英文版), 1989, 10(8): 620-625.
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      • Received Date: 2015-08-19

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