| Citation: |
Li Xianjie, Zeng Qingming, Zhou Zhou, Liu Yugui, Qiao Shuyun, Cai Daomin, Zhao Yonglin, Cai Shujun. AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz[J]. Journal of Semiconductors, 2005, 26(11): 2049-2052.
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Li X J, Zeng Q M, Zhou Z, Liu Y G, Qiao S Y, Cai D M, Zhao Y L, Cai S J. AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz[J]. Chin. J. Semicond., 2005, 26(11): 2049.
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AlGaN/GaN High Electron Mobility Transistors on Sapphires with fmax of 100GHz
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Abstract
AlGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated.The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively.The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz. -
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