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1 |
MEXTRAM model based SiGe HBT large-signal modeling
Han Bo, Li Shoulin, Cheng Jiali, Yin Qiuyan, Gao Jianjun, et al.
Journal of Semiconductors, 2010, 31(10): 104004. doi: 10.1088/1674-4926/31/10/104004
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2 |
Influence of Heterojunction Position on SiGe HBTs with Graded BC Junctions
Luo Rui, Zhang Wei, Fu Jun, Liu Daoguang, Yan Liren, et al.
Journal of Semiconductors, 2008, 29(8): 1491-1495.
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3 |
Extraction of Temperature Parameters and Optimization of the Mextram 504 Model on SiGe HBT
Ren Zheng, Hu Shaojian, Jiang Bin, Wang Yong, Zhao Yuhang, et al.
Journal of Semiconductors, 2008, 29(5): 960-964.
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4 |
Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT
Liu Shuhuan, Lin Dongsheng, Guo Xiaoqiang, Liu Hongbing, Jiang Xinbiao, et al.
Chinese Journal of Semiconductors , 2007, 28(1): 78-83.
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5 |
Analysis and Optimization of Power Si1-x Gex/Si Heteroj unction Bipolar Transistor for Wireless Local Area Network Applications
Xue Chunlai, Shi Wenhua, Cheng Buwen, Yao Fei, Wang Qiming, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 435-438.
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6 |
A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications
Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, et al.
Chinese Journal of Semiconductors , 2007, 28(4): 496-499.
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7 |
Irradiation Effects on DC Current Gain of SiGe HBT
Meng Xiangti, Wang Jilin, Huang Qiang, Jia Hongyong, Chen Peiyi, et al.
Chinese Journal of Semiconductors , 2007, 28(S1): 430-434.
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8 |
Multi-Finger Power SiGe HBT with Non-Uniform Finger Spacing
Jin Dongyue, Zhang Wanrong, Shen Pei, Xie Hongyun, Wang Yang, et al.
Chinese Journal of Semiconductors , 2007, 28(10): 1527-1531.
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9 |
Total Dose Gamma Irradiation Effects and AnnealingCharacteristics of a SiGe HBT
Niu Zhenhong, Guo Qi, Ren Diyuan, Liu Gang, Gao Song, et al.
Chinese Journal of Semiconductors , 2006, 27(9): 1608-1611.
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10 |
Transport Current Model of SiGe HBT
Hu Huiyong, Zhang Heming, Dai Xianying, Xuan Rongxi, Cui Xiaoying, et al.
Chinese Journal of Semiconductors , 2006, 27(6): 1059-1063.
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11 |
GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network
Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, et al.
Chinese Journal of Semiconductors , 2006, 27(12): 2075-2079.
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12 |
Numerical Simulation and Analysis of SiGeC/Si Heterojunction Power Diodes
Gao Yong, Liu Jing, Ma Li, Yu Mingbin
Chinese Journal of Semiconductors , 2006, 27(6): 1068-1072.
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13 |
Temperature Characteristics of Microwave Power SiGe HBTs
Yang Jingwei, Zhang Wanrong, Jin Dongyue, Qiu Jianjun, Gao Pan, et al.
Chinese Journal of Semiconductors , 2006, 27(S1): 231-234.
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14 |
Over Wet-Etching Self-Aligned Ion Implantation Doping Technology on Fabricating SiGe／Si HBT
Yao Fei, Cheng Buwen, Xue Chunlai, Wang Qiming
Chinese Journal of Semiconductors , 2005, 26(S1): 117-120.
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15 |
基于MBE的fmax为157GHz的SiGe HBT器件
刘道广, 郝跃, 徐世六, 李开成, 刘玉奎, et al.
Chinese Journal of Semiconductors , 2005, 26(3): 528-531.
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16 |
基于干/湿法腐蚀的自对准SiGe HBT器件
刘道广, 郝跃, 徐世六, 李开成, 李培咸, et al.
Chinese Journal of Semiconductors , 2005, 26(1): 102-105.
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17 |
高功率附加效率的InGaP/GaAs功率HBT
郑丽萍, 袁志鹏, 樊宇伟, 孙海锋, 狄浩成, et al.
Chinese Journal of Semiconductors , 2005, 26(1): 92-95.
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18 |
SiGe/Ge/SiGe异质结构中自旋极化输运特性的模拟
邹建平, 田立林, 余志平
Chinese Journal of Semiconductors , 2005, 26(2): 299-303.
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19 |
BV_(CBO)为23V且f_T为7GHz30叉指微波功率SiGe HBT(英文)
Chinese Journal of Semiconductors , 2004, 25(10): 1238-1242.
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20 |
多晶发射极双台面微波功率SiGe HBT(英文)
Chinese Journal of Semiconductors , 2003, 24(9): 897-902.
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