Chin. J. Semicond. > 2002, Volume 23 > Issue 7 > 735-740
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新型SiGe/Si异质结开关功率二极管的特性分析及优化设计

高勇 , 陈波涛 and 杨媛

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Key words: SiGe/Si异质结, 功率损耗, 通态压降, 存贮电荷

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(7): 735-740
      高勇, 陈波涛, 杨媛. 新型SiGe/Si异质结开关功率二极管的特性分析及优化设计[J]. 半导体学报(英文版), 2002, 23(7): 735-740.
      Citation:
      高勇, 陈波涛, 杨媛. 新型SiGe/Si异质结开关功率二极管的特性分析及优化设计[J]. 半导体学报(英文版), 2002, 23(7): 735-740.
      shu

      • Received Date: 2015-08-19

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