Chin. J. Semicond. > 1997, Volume 18 > Issue 11 > 832-835
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(113)B-GaAs/Al_(0.3)Ga_(0.7)As单量子阱结构的光致发光谱研究

陈定钦 , 邢益荣 , 李国华 , 朱勤生 , 曹作萍 , 张广泽 , 肖君 , 吴汲安 and 钟战天

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(11): 832-835
      陈定钦, 邢益荣, 李国华, 朱勤生, 曹作萍, 张广泽, 肖君, 吴汲安, 钟战天. (113)B-GaAs/Al_(0.3)Ga_(0.7)As单量子阱结构的光致发光谱研究[J]. 半导体学报(英文版), 1997, 18(11): 832-835.
      Citation:
      陈定钦, 邢益荣, 李国华, 朱勤生, 曹作萍, 张广泽, 肖君, 吴汲安, 钟战天. (113)B-GaAs/Al_(0.3)Ga_(0.7)As单量子阱结构的光致发光谱研究[J]. 半导体学报(英文版), 1997, 18(11): 832-835.
      shu

      • Received Date: 2015-08-19

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