J. Semicond. > 2008, Volume 29 > Issue 3 > 414-417

LETTERS

Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz

Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai and Qi Ming

+ Author Affiliations

PDF

Abstract: Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors (SHBTS) are developed.A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×15μm emitter area at VCE=1.1V and IC=335mA.This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.

Key words: InPHBTpolyimideplanarization

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3331 Times PDF downloads: 1207 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 22 October 2007 Online: Published: 01 March 2008

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, 29(3): 414-417. ****Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.
      Citation:
      Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, 29(3): 414-417. ****
      Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.

      Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-20
      • Revised Date: 2007-10-22
      • Published Date: 2008-02-28

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return