Chin. J. Semicond. > 1991, Volume 12 > Issue 12 > 755-758
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反应溅射生长的a-Si:H/a-Ge:H超晶格光学性质研究

王印月 , 许怀哲 , 张仿清 and 陈光华

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(12): 755-758
      王印月, 许怀哲, 张仿清, 陈光华. 反应溅射生长的a-Si:H/a-Ge:H超晶格光学性质研究[J]. 半导体学报(英文版), 1991, 12(12): 755-758.
      Citation:
      王印月, 许怀哲, 张仿清, 陈光华. 反应溅射生长的a-Si:H/a-Ge:H超晶格光学性质研究[J]. 半导体学报(英文版), 1991, 12(12): 755-758.
      shu

      • Received Date: 2015-08-19

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