Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

Chen Xinliang; Xue Junming; Sun Jian; Zhao Ying; Geng Xinhua

Chin. J. Semicond. > 2007, Volume 28 > Issue 7 > 1072-1077

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Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

Chen Xinliang, Xue Junming, Sun Jian, Zhao Ying and Geng Xinhua

+ Author Affiliations

Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,
Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology,Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Institute of Photo-Electronic Thin Film Devices and Technology,Nankai University,

Abstract: The structural,optical,and electrical properties of ZnO thin films grown by metal organic chemical vapor deposition at different B2H6 flow rates were investigated.XRD spectra and SEM images indicate that all the ZnO films have the preferential orientation of (110) peak,showing textured surfaces.When the B2H6 flow rate was set at 10sccm,a low sheet resistance (12Ω/□) and high average transparency (＞80%) in the range of visible light and infrared and 30.5cm2/(V·s) mobility were obtained for 1000nm thick ZnO film deposited on 6cm×6cm glass substrate at a low temperature of 423K.PL spectra indicate that boron-doping improves the crystal quality,which explains why the ZnO:B films show a better electrical stability than the un-doped samples.Low-pressure annealing in H2 atmosphere at 473K of ZnO films effectively enhances the electron mobility.When applied in a-Si thin film solar cells as front electrodes,ZnO films present equivalent performance to Asahi-U type SnO2 films

Key words: MOCVD, textured ZnO film, B-doping, front electrodes, solar cells

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江宁, 臧岚, 江若琏, 朱顺明, 刘夏冰, 程雪梅, 韩平, 王荣华, 胡晓宁, 方家熊. Si上Si_(1-x-y)Ge_xC_y三元合金薄膜的化学气相淀积生长研究[J]. 半导体学报(英文版), 1999, 20(8): 656-661.

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Received: 18 August 2015 Revised: 23 February 2007 Online: Published: 01 July 2007

The structural,optical,and electrical properties of ZnO thin films grown by metal organic chemical vapor deposition at different B2H6 flow rates were investigated.XRD spectra and SEM images indicate that all the ZnO films have the preferential orientation of (110) peak,showing textured surfaces.When the B2H6 flow rate was set at 10sccm,a low sheet resistance (12Ω/□) and high average transparency (＞80%) in the range of visible light and infrared and 30.5cm2/(V·s) mobility were obtained for 1000nm thick ZnO film deposited on 6cm×6cm glass substrate at a low temperature of 423K.PL spectra indicate that boron-doping improves the crystal quality,which explains why the ZnO:B films show a better electrical stability than the un-doped samples.Low-pressure annealing in H2 atmosphere at 473K of ZnO films effectively enhances the electron mobility.When applied in a-Si thin film solar cells as front electrodes,ZnO films present equivalent performance to Asahi-U type SnO2 films

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