Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer

Sun Shilong; 刘彩池; Liu Caichi; Hao Qiuyan; Teng Xiaoyun; Zhao Liwei; Zhao Yanqiao; Wang Lijian

Article Navigation > Journal of Semiconductors > 2006 > 27(S1): 165-168

Sun Shilong, 刘彩池, Liu Caichi, Hao Qiuyan, Teng Xiaoyun, Zhao Liwei, Zhao Yanqiao, Wang Lijian. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Journal of Semiconductors, 2006, 27(S1): 165-168. ****Sun S L, Liu C C, Hao Q Y, Teng X Y, Zhao L W, Zhao Y Q, Wang L J. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Chin. J. Semicond., 2006, 27(13): 165.

Citation:

Sun S L, Liu C C, Hao Q Y, Teng X Y, Zhao L W, Zhao Y Q, Wang L J. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Chin. J. Semicond., 2006, 27(13): 165.

Citation:

Sun S L, Liu C C, Hao Q Y, Teng X Y, Zhao L W, Zhao Y Q, Wang L J. Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer[J]. Chin. J. Semicond., 2006, 27(13): 165.

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Effect of Rapid Thermal Process on Oxygen Precipitatesin Heavily As-Doped Wafer

Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China
Institute of Information and Function Material,Hebei University of Technology,Tianjin 300130,China

Received Date: 2015-08-20

Abstract

Abstract

Rapid thermal process (RTP) is performed to heavily-As doped silicon wafer.It is found that the density of oxygen precipitates increases slowly with the increase of the RTP temperature,the cooling rate, and the RTP time.
- :heavily-As doped silicon wafer,
- RTP,
- oxygen precipitates,
- denuded zone

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