Chin. J. Semicond. > 2003, Volume 24 > Issue 5 > 510-515
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超深亚微米非对称Halo LDD低功耗新器件的研究分析

田豫 and 黄如

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Key words: 非对称, Halo LDD, 低功耗, 模拟

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(5): 510-515
      田豫, 黄如. 超深亚微米非对称Halo LDD低功耗新器件的研究分析[J]. 半导体学报(英文版), 2003, 24(5): 510-515.
      Citation:
      田豫, 黄如. 超深亚微米非对称Halo LDD低功耗新器件的研究分析[J]. 半导体学报(英文版), 2003, 24(5): 510-515.
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      • Received Date: 2015-08-20

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