Chin. J. Semicond. > 1990, Volume 11 > Issue 10 > 786-789
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射频溅射CoMnNiO非晶薄膜中空穴的迁移率

陶明德 , 谭辉 , 秦东 and 韩英

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(10): 786-789
      陶明德, 谭辉, 秦东, 韩英. 射频溅射CoMnNiO非晶薄膜中空穴的迁移率[J]. 半导体学报(英文版), 1990, 11(10): 786-789.
      Citation:
      陶明德, 谭辉, 秦东, 韩英. 射频溅射CoMnNiO非晶薄膜中空穴的迁移率[J]. 半导体学报(英文版), 1990, 11(10): 786-789.
      shu

      • Received Date: 2015-08-19

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