Chin. J. Semicond. > 1991, Volume 12 > Issue 5 > 300-303
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半绝缘InP的铁能级研究

彭承 , 孙恒慧 , 唐文国 and 李自元

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    赵善麒，高鼎三，王正元. 中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制[J]. 半导体学报(英文版), 1994, 15(7): 488-495.
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    Received: 19 August 2015 Revised: Online: Published: 01 May 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(5): 300-303
      赵善麒，高鼎三，王正元. 中心锥形槽状光敏门极的200A，1200V光控双向晶闸管的研制[J]. 半导体学报(英文版), 1994, 15(7): 488-495.
      Citation:
      彭承, 孙恒慧, 唐文国, 李自元. 半绝缘InP的铁能级研究[J]. 半导体学报(英文版), 1991, 12(5): 300-303.
      shu

      • Received Date: 2015-08-19

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