Chin. J. Semicond. > 2001, Volume 22 > Issue 10 > 1258-1263
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CONTENTS

(Si,Er)双注入热氧化SiO_2/Si薄膜的表面结构及1.54μm光发射

徐飞 , 肖志松 , 程国安 , 易仲珍 , 曾宇昕 , 张通和 and 顾岚岚

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Key words: MEVVA离子源, 双注入, 掺铒硅, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 October 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(10): 1258-1263
      徐飞, 肖志松, 程国安, 易仲珍, 曾宇昕, 张通和, 顾岚岚. (Si,Er)双注入热氧化SiO_2/Si薄膜的表面结构及1.54μm光发射[J]. 半导体学报(英文版), 2001, 22(10): 1258-1263.
      Citation:
      徐飞, 肖志松, 程国安, 易仲珍, 曾宇昕, 张通和, 顾岚岚. (Si,Er)双注入热氧化SiO_2/Si薄膜的表面结构及1.54μm光发射[J]. 半导体学报(英文版), 2001, 22(10): 1258-1263.
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      • Received Date: 2015-08-20

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