Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 613-619

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MWECR CVD系统中磁场梯度对a-Si:H薄膜沉积速率的影响(英文)

胡跃辉 , 吴越颖 , 陈光华 , 王青 , 张文理 and 阴生毅

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Key words: 磁场梯度, 洛伦兹拟合, a-Si∶H薄膜, 沉积速率, MWECR CVD沉积系统

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 613-619
      胡跃辉, 吴越颖, 陈光华, 王青, 张文理, 阴生毅. MWECR CVD系统中磁场梯度对a-Si:H薄膜沉积速率的影响(英文)[J]. 半导体学报(英文版), 2004, 25(6): 613-619.
      Citation:
      胡跃辉, 吴越颖, 陈光华, 王青, 张文理, 阴生毅. MWECR CVD系统中磁场梯度对a-Si:H薄膜沉积速率的影响(英文)[J]. 半导体学报(英文版), 2004, 25(6): 613-619.
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      • Received Date: 2015-08-19

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