| Citation: |
Xuejing Yan(颜学进), Guoyang Xu(许国阳), Hongliang Zhu(朱洪亮), Fan Zhou(周帆), Xiaojie Wang(汪孝杰), Jingyuan Zhang(张静媛), Huiliang Tian(田慧良), Chaohua Ma(马朝华), Huiyun Shu(舒惠云), Yunxia Bai(白云霞), Kekui Bi(毕可奎), Ronghan Wu(吴荣汉), Qiming Wang(王启明), Wei Wang(王圩). Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm Wavelength[J]. 半导体学报(英文版), 1999, 20(5): 412-415.
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Abstract
The design and fabrication of 1.55um wavelength Multiple Quantum Well (MQW) Distributed Feedback (DFB) laser integrated with electroabsorption modulator is reported. A static single longitudinal mode output power greater than 6mW in free space is obtained, with 0V bias to the 150um length modulator and an extinction ratio of up to 11dB at 4V at 100mA operation current of 300um length DFB laser. The modulator side and DFB laser side are coated with Antireflcetion (AR) and High reflection (HR) coating respectively. The threshold current of DFB laser is about 16mA and the side mode suppression ratio is always greater than 35dB when the reverse bias voltage of the modulator is varied from 0V to 4V.
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