Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 637-645
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Forming of Very Shallow Junction for S/D Extension in Deep Sub- Micron CMOS Devices

殷华湘 and 徐秋霞

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Key words: CMOS

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 637-645
      殷华湘, 徐秋霞. Forming of Very Shallow Junction for S/D Extension in Deep Sub- Micron CMOS Devices[J]. 半导体学报(英文版), 2000, 21(7): 637-645.
      Citation:
      殷华湘, 徐秋霞. Forming of Very Shallow Junction for S/D Extension in Deep Sub- Micron CMOS Devices[J]. 半导体学报(英文版), 2000, 21(7): 637-645.
      shu

      • Received Date: 2015-08-20

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