Chin. J. Semicond. > 2003, Volume 24 > Issue 4 > 396-400
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双极RF功率管的深阱结终端

周蓉 , 胡思福 , 李肇基 and 张庆中

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Key words: 双极RF功率管, 深阱结终端, 击穿电压, 填充介质

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(4): 396-400
      周蓉, 胡思福, 李肇基, 张庆中. 双极RF功率管的深阱结终端[J]. 半导体学报(英文版), 2003, 24(4): 396-400.
      Citation:
      周蓉, 胡思福, 李肇基, 张庆中. 双极RF功率管的深阱结终端[J]. 半导体学报(英文版), 2003, 24(4): 396-400.
      shu

      • Received Date: 2015-08-20

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