| Citation: |
Hu Huiyong, Zhang Heming, Jia Xinzhang, Dai Xianying, Xuan Rongxi. Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits[J]. Journal of Semiconductors, 2007, 28(5): 681-685.
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Hu H Y, Zhang H M, Jia X Z, Dai X Y, Xuan R X. Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits[J]. Chin. J. Semicond., 2007, 28(5): 681.
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Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits
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Abstract
Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2~3ps,which is shorter than that of the 3D Si-Si CMOS inverter.-
Keywords:
- Si-SiGe,
- three-dimensional,
- CMOS,
- integrated circuits
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References
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Proportional views
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