Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1139-1142
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富镉CdSe单晶的气相生长及其电学特性

金应荣 , 朱世富 , 赵北君 , 邵双运 , 李奇峰 , 王雪敏 , 于丰亮 and 宋芳

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Key words: 气相生长, CdSe单晶, 电子陷阱

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    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1139-1142
      金应荣, 朱世富, 赵北君, 邵双运, 李奇峰, 王雪敏, 于丰亮, 宋芳. 富镉CdSe单晶的气相生长及其电学特性[J]. 半导体学报(英文版), 2001, 22(9): 1139-1142.
      Citation:
      金应荣, 朱世富, 赵北君, 邵双运, 李奇峰, 王雪敏, 于丰亮, 宋芳. 富镉CdSe单晶的气相生长及其电学特性[J]. 半导体学报(英文版), 2001, 22(9): 1139-1142.
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      • Received Date: 2015-08-20

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