Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1377-1381
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钕离子注入单晶硅光致发光的起源(英文)

肖志松 , 徐飞 , 张通和 , 易仲珍 and 程国安

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Key words: 光致发光, 离子注入, 稀土

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1377-1381
      肖志松, 徐飞, 张通和, 易仲珍, 程国安. 钕离子注入单晶硅光致发光的起源(英文)[J]. 半导体学报(英文版), 2001, 22(11): 1377-1381.
      Citation:
      肖志松, 徐飞, 张通和, 易仲珍, 程国安. 钕离子注入单晶硅光致发光的起源(英文)[J]. 半导体学报(英文版), 2001, 22(11): 1377-1381.
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      • Received Date: 2015-08-20

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