Chin. J. Semicond. > 2004, Volume 25 > Issue 7 > 879-883
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深亚微米设计中天线效应的消除

杨旭 , 黄令仪 , 叶青 and 周玉梅

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Key words: PAE效应, 等离子, 栅氧化层, 可靠性

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    Received: 19 August 2015 Revised: Online: Published: 01 July 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(7): 879-883
      杨旭, 黄令仪, 叶青, 周玉梅. 深亚微米设计中天线效应的消除[J]. 半导体学报(英文版), 2004, 25(7): 879-883.
      Citation:
      杨旭, 黄令仪, 叶青, 周玉梅. 深亚微米设计中天线效应的消除[J]. 半导体学报(英文版), 2004, 25(7): 879-883.
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      • Received Date: 2015-08-19

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