Chin. J. Semicond. > 2001, Volume 22 > Issue 1 > 25-30
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关态应力下 P- MOSFETs的退化(英文)

杨存宇 , 王子欧 , 谭长华 and 许铭真

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Key words: 关态应力, 栅感应漏电(GIDL), HCI, 界面陷阱

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(1): 25-30
      杨存宇, 王子欧, 谭长华, 许铭真. 关态应力下 P- MOSFETs的退化(英文)[J]. 半导体学报(英文版), 2001, 22(1): 25-30.
      Citation:
      杨存宇, 王子欧, 谭长华, 许铭真. 关态应力下 P- MOSFETs的退化(英文)[J]. 半导体学报(英文版), 2001, 22(1): 25-30.
      shu

      • Received Date: 2015-08-19

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