Chin. J. Semicond. > 1982, Volume 3 > Issue 3 > 251-254
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用DLTS研究注氧硅中深中心缺陷

张玉峰 , 张丽珠 , 吴书祥 and 杜永昌

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    张玉峰, 张丽珠, 吴书祥, 杜永昌. 用DLTS研究注氧硅中深中心缺陷[J]. 半导体学报(英文版), 1982, 3(3): 251-254.
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    Received: 20 August 2015 Revised: Online: Published: 01 March 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(3): 251-254
      张玉峰, 张丽珠, 吴书祥, 杜永昌. 用DLTS研究注氧硅中深中心缺陷[J]. 半导体学报(英文版), 1982, 3(3): 251-254.
      Citation:
      张玉峰, 张丽珠, 吴书祥, 杜永昌. 用DLTS研究注氧硅中深中心缺陷[J]. 半导体学报(英文版), 1982, 3(3): 251-254.
      shu

      • Received Date: 2015-08-20

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