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An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs

Li Xiaojian, Tan Yaohua and Tian Lilin

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Abstract: An analytical model of electron mobility for strained-silicon channel nMOSFETs is proposed in this paper.The model deals directly with the strain tensor,and thus is independent of the manufacturing process.It is suitable for 〈100〉/〈110〉 channel nMOSFETs under biaxial or 〈100〉/〈110〉 uniaxial stress and can be implemented in conventional device simulation tools.

Key words: Strained-Si, electron mobility, analytical model, nMOSFET, uniaxial stress/strain

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    Received: 18 August 2015 Revised: 09 January 2008 Online: Published: 01 May 2008

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      Article Navigation >  Journal of Semiconductors  > 2008  >  29(5): 863-868
      Li Xiaojian, Tan Yaohua, Tian Lilin. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. Journal of Semiconductors, 2008, 29(5): 863-868. ****Li X J, Tan Y H, Tian L L. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. J. Semicond., 2008, 29(5): 863.
      Citation:
      Li Xiaojian, Tan Yaohua, Tian Lilin. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. Journal of Semiconductors, 2008, 29(5): 863-868. ****
      Li X J, Tan Y H, Tian L L. An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs[J]. J. Semicond., 2008, 29(5): 863.
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      An Analytical Model of Electron Mobility for Strained-Si Channel nMOSFETs

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics,Tsinghua University,Beijing 100084,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-26
      • Revised Date: 2008-01-09
      • Published Date: 2008-05-05

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