Chin. J. Semicond. > 2001, Volume 22 > Issue 12 > 1586-1591
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PMOSFET's热载流子退化模拟及寿命评估的统一模型

张进城 , 郝跃 and 朱志炜

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Key words: PMOS器件, 热载流子退化, 退化模拟, 寿命评估

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(12): 1586-1591
      张进城, 郝跃, 朱志炜. PMOSFET's热载流子退化模拟及寿命评估的统一模型[J]. 半导体学报(英文版), 2001, 22(12): 1586-1591.
      Citation:
      张进城, 郝跃, 朱志炜. PMOSFET's热载流子退化模拟及寿命评估的统一模型[J]. 半导体学报(英文版), 2001, 22(12): 1586-1591.
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      • Received Date: 2015-08-20

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