Chin. J. Semicond. > 1984, Volume 5 > Issue 6 > 683-688
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化合物半导体AlSb、ZnSe和CdTe的能带结构

郭志权 , 范钦梁 , 黄和鸾 and 邢金海

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(6): 683-688
      郭志权, 范钦梁, 黄和鸾, 邢金海. 化合物半导体AlSb、ZnSe和CdTe的能带结构[J]. 半导体学报(英文版), 1984, 5(6): 683-688.
      Citation:
      郭志权, 范钦梁, 黄和鸾, 邢金海. 化合物半导体AlSb、ZnSe和CdTe的能带结构[J]. 半导体学报(英文版), 1984, 5(6): 683-688.
      shu

      • Received Date: 2015-08-20

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