Chin. J. Semicond. > 2000, Volume 21 > Issue 12 > 1208-1213
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SiGe/SiHBT发射结的寄生势垒及其对器件室温和低温特性的影响

徐晨 , 沈光地 , 陈建新 , 邹德恕 , 李建军 , 罗辑 , 魏欢 , 周静 and 董欣

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Key words: SiGeHBT, 寄生势垒, 杂质偏析, 低温

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(12): 1208-1213
      徐晨, 沈光地, 陈建新, 邹德恕, 李建军, 罗辑, 魏欢, 周静, 董欣. SiGe/SiHBT发射结的寄生势垒及其对器件室温和低温特性的影响[J]. 半导体学报(英文版), 2000, 21(12): 1208-1213.
      Citation:
      徐晨, 沈光地, 陈建新, 邹德恕, 李建军, 罗辑, 魏欢, 周静, 董欣. SiGe/SiHBT发射结的寄生势垒及其对器件室温和低温特性的影响[J]. 半导体学报(英文版), 2000, 21(12): 1208-1213.
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      • Received Date: 2015-08-20

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